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Proceedings Paper

GaSb/GaAs quantum dots with type-II band alignments prepared by molecular beam epitaxy for device applications
Author(s): Shih-Yen Lin; Wei-Hsun Lin; Chi-Che Tseng; Shu-Han Chen
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Paper Abstract

The growth procedures and device applications of GaSb/GaAs quantum dots (QDs) are investigated in this report. The influence of As flux on the GaSb QD morphologies and optical characteristics has revealed the importance of precise Sb/As flux control during Sb post-soaking procedures after GaSb deposition. With optimized GaSb QD growth conditions and long-term Sb post soaking procedure, room-temperature operation light-emitting diodes (LEDs) and high-temperature operation quantum-dot infrared photodetectors (QDIPs) are demonstrated. The results have revealed the possibilities of type-II GaSb QDs in the applications of optical devices.

Paper Details

Date Published: 1 March 2011
PDF: 9 pages
Proc. SPIE 7947, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII, 79470M (1 March 2011); doi: 10.1117/12.873657
Show Author Affiliations
Shih-Yen Lin, Research Ctr. for Applied Sciences, Academia Sinica (Taiwan)
National ChiaoTung Univ. (Taiwan)
National Taiwan Ocean Univ. (Taiwan)
Wei-Hsun Lin, Research Ctr. for Applied Sciences, Academia Sinica (Taiwan)
Chi-Che Tseng, Research Ctr. for Applied Sciences, Academia Sinica (Taiwan)
Shu-Han Chen, Research Ctr. for Applied Sciences, Academia Sinica (Taiwan)


Published in SPIE Proceedings Vol. 7947:
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII
Kurt G. Eyink; Frank Szmulowicz; Diana L. Huffaker, Editor(s)

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