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Proceedings Paper

Future directions in quasi-phasematched semiconductors for mid-infrared lasers
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Paper Abstract

Quasi-phase-matched (QPM) materials such as periodically poled lithium niobate (PPLN) and tantalate (PPLT) have led to extremely efficient frequency-shifted laser sources in the visible and near-infrared, and QPM semiconductors promise to extend this performance beyond 4um. Orientation patterned semiconductors are not only transparent far deeper into the mid-IR but also offer higher nonlinear coefficients, higher thermal conductivity, higher purity levels, and very low losses when grown from the vapor phase. We compare the properties, processing, and performance of orientationpatterned GaAs (OPGaAs) with candidate compound semiconductors being for development as the next generation QPM nonlinear optical materials in the mid-infrared, and identify gallium phosphide as the most promising material for near-term development.

Paper Details

Date Published: 21 February 2011
PDF: 7 pages
Proc. SPIE 7917, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications X, 79171F (21 February 2011); doi: 10.1117/12.873649
Show Author Affiliations
Peter G. Schunemann, BAE Systems, Inc. (United States)
Scott D. Setzler, BAE Systems, Inc. (United States)


Published in SPIE Proceedings Vol. 7917:
Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications X
Konstantin L. Vodopyanov, Editor(s)

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