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Proceedings Paper

1W semiconductor based laser module with a narrow linewidth emitting near 1064nm
Author(s): Stefan Spiessberger; Max Schiemangk; Alexander Sahm; Andreas Wicht; Hans Wenzel; Jörg Fricke; Götz Erbert
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Paper Abstract

We demonstrate a compact high-power master oscillator (MO) power amplifier (PA) laser module emitting near 1064 nm. The module is micro-integrated on a footprint of 50 x 10mm2. The oscillator is a distributed Bragg reflector laser optimized for narrow linewidth operation. The amplifier consists of a ridge waveguide entry and a tapered section. The module features stable single-mode narrow linewidth emission at an output power of 1W and can be tuned mode-hop free by 450GHz.

Paper Details

Date Published: 17 February 2011
PDF: 6 pages
Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 795311 (17 February 2011); doi: 10.1117/12.873518
Show Author Affiliations
Stefan Spiessberger, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (Germany)
Max Schiemangk, Humboldt-Univ. zu Berlin (Germany)
Alexander Sahm, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (Germany)
Andreas Wicht, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (Germany)
Hans Wenzel, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (Germany)
Jörg Fricke, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (Germany)
Götz Erbert, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (Germany)


Published in SPIE Proceedings Vol. 7953:
Novel In-Plane Semiconductor Lasers X
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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