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Proceedings Paper

Role of In-segregation in anomalously large band-gap bowings of (In,Al,Ga)N
Author(s): I. Gorczyca; T. Suski; N. E. Christensen; A. Svane
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Paper Abstract

Large bowings of the band gap and its pressure coefficient in In-containing nitride semiconductor alloys are observed. Photoluminescence measurements for InxGa1-xN and InxAl1-xN combined with other experimental data show large scatter of the results. A comparison with ab-initio calculations suggests that this scatter can be ascribed to the formation of In clusters during the sample preparation. The explanation of the observed anomalies taking into account chemical and size effects indicates a specific nature of InN, different from other nitrides and other In-based binary semiconductors.

Paper Details

Date Published: 3 March 2011
PDF: 9 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79390J (3 March 2011); doi: 10.1117/12.873402
Show Author Affiliations
I. Gorczyca, Institute of High Pressure Physics (Poland)
T. Suski, Institute of High Pressure Physics (Poland)
N. E. Christensen, Aarhus Univ. (Denmark)
A. Svane, Aarhus Univ. (Denmark)


Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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