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Proceedings Paper

Ultrafast few-fermion dynamics in single self-assembled InGaAs/GaAs quantum dots
Author(s): M. Betz; M. Zecherle; C. Ruppert; E. C. Clark; G. Abstreiter; J. J. Finley
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Paper Abstract

We review a comprehensive study of the ultrafast optoelectronic properties of a single self-assembled InGaAs/GaAs quantum dot. While manipulation of the artificial atom relies on two widely and independently tunable picoseconds pulse trains, sensitive readout is achieved via the ~pA photocurrent of the diode device. In particular, the absorption changes after occupation of an s-shell exciton reveal a biexciton absorption line as well as previously unobserved p-shell transitions in the presence of s-shell population. In addition, time-resolved data directly maps the picosecond tunneling times of electrons and holes out of the dot. Beyond these incoherent phenomena, we also realize coherent QD manipulations. Those comprise well-known excitonic Rabi-oscillations as well as single-pulse biexciton generation and conditional Rabi-oscillations of the exciton-biexciton transition after deterministic exciton preparation.

Paper Details

Date Published: 21 February 2011
PDF: 7 pages
Proc. SPIE 7937, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, 793702 (21 February 2011); doi: 10.1117/12.873249
Show Author Affiliations
M. Betz, Technische Univ. Dortmund (Germany)
M. Zecherle, Technische Univ. München (Germany)
C. Ruppert, Technische Univ. München (Germany)
E. C. Clark, Technische Univ. München (Germany)
G. Abstreiter, Technische Univ. München (Germany)
J. J. Finley, Technische Univ. München (Germany)


Published in SPIE Proceedings Vol. 7937:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV
Kong-Thon Tsen; Jin-Joo Song; Markus Betz; Abdulhakem Y. Elezzabi, Editor(s)

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