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Proceedings Paper

High modal gain in Ga(NAsP)/(BGa)((As)P) heterostructures grown lattice matched on (001) silicon
Author(s): N. Koukourakis; D. A. Funke; N. C. Gerhardt; M. R. Hofmann; S. Liebich; C. Bückers; S. Zinnkann; M. Zimprich; A. Beyer; S. Chatterjee; S. W. Koch; B. Kunert; K. Volz; W. Stolz
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Paper Abstract

We present modal gain measurements in Ga(NAsP) heterostructures pseudomorphically grown on silicon substrate. Using the variable stripe length method we analyze the modal gain performance of an unprocessed single quantum well sample for different excitation densities. We obtain high modal gain values up to 55 cm-1 at room temperature. These values are comparable to those of common high quality laser material. This demonstrates the high optical quality of the new dilute nitride material Ga(NAsP) and underlines its candidacy for electrically pumped lasing on silicon substrate.

Paper Details

Date Published: 3 March 2011
PDF: 7 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 793927 (3 March 2011); doi: 10.1117/12.873170
Show Author Affiliations
N. Koukourakis, Ruhr-Univ. Bochum (Germany)
D. A. Funke, Ruhr-Univ. Bochum (Germany)
N. C. Gerhardt, Ruhr-Univ. Bochum (Germany)
M. R. Hofmann, Ruhr-Univ. Bochum (Germany)
S. Liebich, Philipps-Univ. Marburg (Germany)
C. Bückers, Philipps-Univ. Marburg (Germany)
S. Zinnkann, Philipps-Univ. Marburg (Germany)
M. Zimprich, Philipps-Univ. Marburg (Germany)
A. Beyer, Philipps-Univ. Marburg (Germany)
S. Chatterjee, Philipps-Univ. Marburg (Germany)
S. W. Koch, Philipps-Univ. Marburg (Germany)
B. Kunert, NAsP III/V GmbH (Germany)
K. Volz, Philipps-Univ. Marburg (Germany)
W. Stolz, Philipps-Univ. Marburg (Germany)


Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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