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Proceedings Paper

Higher speed VCSELs by photon lifetime reduction
Author(s): Petter Westbergh; Johan S. Gustavsson; Benjamin Kögel; Åsa Haglund; Anders Larsson; Andrew Joel
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Paper Abstract

The impedance characteristics and the effects of photon lifetime reduction on the performance of high-speed 850 nm VCSELs are investigated. Through S11 measurements and equivalent circuit modeling we show that the parasitic mesa capacitance can be significantly reduced by using multiple oxide layers. By performing a shallow surface etch (25 - 55 nm) on the fabricated VCSELs, we are able to reduce the photon lifetime by up to 80% and thereby significantly improve both static and dynamic properties of the VCSELs. By optimizing the photon lifetime we are able to enhance the 3dB modulation bandwidth of 7 μm oxide aperture VCSELs from 15 GHz to 23 GHz and finally demonstrate errorfree transmission at up to 40 Gbit/s.

Paper Details

Date Published: 8 February 2011
PDF: 9 pages
Proc. SPIE 7952, Vertical-Cavity Surface-Emitting Lasers XV, 79520K (8 February 2011); doi: 10.1117/12.873161
Show Author Affiliations
Petter Westbergh, Chalmers Univ. of Technology (Sweden)
Johan S. Gustavsson, Chalmers Univ. of Technology (Sweden)
Benjamin Kögel, Chalmers Univ. of Technology (Sweden)
Åsa Haglund, Chalmers Univ. of Technology (Sweden)
Anders Larsson, Chalmers Univ. of Technology (Sweden)
Andrew Joel, IQE Europe Ltd. (United Kingdom)


Published in SPIE Proceedings Vol. 7952:
Vertical-Cavity Surface-Emitting Lasers XV
James K. Guenter; Chun Lei, Editor(s)

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