Share Email Print
cover

Proceedings Paper

Characterization of the ambipolar transport properties of polymer-based organic photoconductor by non-steady-state photo-EMF technique
Author(s): A. Sanchez Juarez; K. Aleman; M. Espinosa; A. Kosarev; S. Mansurova; S. Koeber; K. Meerholz
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Organic semiconductors with bipolar (electron and hole) transport capability play a crucial role in electronic and optoelectronic devices such as organic light-emitting diodes (OLEDs), bipolar transistors and photovoltaic cells. Recently, a considerable amount of work has been devoted to the characterization of ambipolar transport in organic materials, allowing for a better understanding of their properties as well as the physical processes, which take place in materials and devices [1-4]. The experimental methods used to obtain information about charge transport in organic semiconductors - time-of-flight (TOF) transient photoconductivity [5], charge extraction by linearly increasing voltage (CELIV) [6], current-voltage measurements in space charge limited current regime [7], and field effect transistor (FET) measurements [8, 9] are mostly focused on determination of charge carrier mobility. On the other hand, for many devices (e.g. organic photovoltaic solar cells or light emitting diodes) the knowledge of the transport and recombination characteristics of both carriers (electron and hole), and specifically their diffusion LD = the square root of (here D is the diffusion coefficient and τ is the photocarriers lifetime) and drift lengths L0 = μτE0 (here μ is the carrier's mobility and E0 is the electric dc field) is important.

Paper Details

Date Published: 22 September 2010
PDF: 6 pages
Proc. SPIE 7750, Photonics North 2010, 77501V (22 September 2010); doi: 10.1117/12.873115
Show Author Affiliations
A. Sanchez Juarez, Instituto Nacional de Astrofísica, Óptica y Electrónica (Mexico)
K. Aleman, Instituto Nacional de Astrofísica, Óptica y Electrónica (Mexico)
M. Espinosa, Instituto Nacional de Astrofísica, Óptica y Electrónica (Mexico)
A. Kosarev, Instituto Nacional de Astrofísica, Óptica y Electrónica (Mexico)
S. Mansurova, Instituto Nacional de Astrofísica, Óptica y Electrónica (Mexico)
S. Koeber, Univ. zu Köln (Germany)
K. Meerholz, Univ. zu Köln (Germany)


Published in SPIE Proceedings Vol. 7750:
Photonics North 2010
Henry P. Schriemer; Rafael N. Kleiman, Editor(s)

© SPIE. Terms of Use
Back to Top