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Proceedings Paper

A low temperature fabrication process utilizing FIB implantation for CMOS compatible photovoltaic cells
Author(s): Jasbir N. Patel; Clinton Landrock; Badr Omrane; Bozena Kaminska; Bonnie L. Gray
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Paper Abstract

In this article, we present a novel low temperature fabrication process using focused ion beam (FIB) for CMOS compatible photovoltaic cells. Photovoltaic cells are used for scavenging light energy to power CMOS devices and integrating photovoltaic cells on the same CMOS die for self-powering integrated circuits is highly desirable. Integrating such photovoltaic cells as a post-process of the pre-fabricated CMOS die will avoid many complex assembling steps as well as unpredictable interconnect problems. To demonstrate the proof of concept, we have developed low temperature fabrication process to avoid damage to the pre-fabricated CMOS dies. We are also going to introduce focused-ion beam (FIB) as an implantation source to dope silicon wafer for desired concentration. The successfully fabricated demonstration device is tested using a solar simulator. The results obtained from the experimental data indicate that the demonstration device works perfectly as a photovoltaic cell rather with very low efficiency (0.004%).

Paper Details

Date Published: 22 September 2010
PDF: 7 pages
Proc. SPIE 7750, Photonics North 2010, 775034 (22 September 2010); doi: 10.1117/12.873111
Show Author Affiliations
Jasbir N. Patel, Simon Fraser Univ. (Canada)
Clinton Landrock, Simon Fraser Univ. (Canada)
Badr Omrane, Simon Fraser Univ. (Canada)
Bozena Kaminska, Simon Fraser Univ. (Canada)
Bonnie L. Gray, Simon Fraser Univ. (Canada)

Published in SPIE Proceedings Vol. 7750:
Photonics North 2010
Henry P. Schriemer; Rafael N. Kleiman, Editor(s)

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