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Proceedings Paper

747 nm Pr:YAP microchip-laser output characteristics
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Paper Abstract

Laser characteristics of Pr:YAlO3 microchip laser operating in the near-infrared spectral region are reported. For active medium pumping, GaN laser diode providing up to 1 W of output power at ~448 nm was employed. Microchip resonator was formed by dielectric mirrors directly deposited on the Pr:YAlO3 crystal surfaces. The continuous-wave output radiation at 747 nm with maximum power of 139 mW has been extracted from the microchip laser system. Slope efficiency related to the incident pumping power was 25%.

Paper Details

Date Published: 4 March 2011
PDF: 6 pages
Proc. SPIE 7912, Solid State Lasers XX: Technology and Devices, 79121X (4 March 2011); doi: 10.1117/12.873046
Show Author Affiliations
Martin Fibrich, Czech Technical Univ. in Prague (Czech Republic)
Helena Jelínková, Czech Technical Univ. in Prague (Czech Republic)
Jan Šulc, Czech Technical Univ. in Prague (Czech Republic)
Karel Nejezchleb, Crytur Ltd. (Czech Republic)
Václav Škoda, Crytur Ltd. (Czech Republic)


Published in SPIE Proceedings Vol. 7912:
Solid State Lasers XX: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh Shori, Editor(s)

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