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Proceedings Paper

Determination of internal quantum efficiency of a photodetector through its voltage-current characteristics
Author(s): Aleksey Mikryukov; Alexander Kovalev; Anatoly A. Liberman; Sergey Moskaluk
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Paper Abstract

This paper, for the first time, suggests a method of determining internal quantum efficiency of an opaque p+nn+ photodetector and some of its characteristics based on a comparison between experimental measurements of photodetector's voltage-current characteristics and characteristics calculated with PC1D. For our research we chose a silicon photodetector Hamamatsu 1337. It was necessary that reflection coefficient of the front surface of the photodetector is known. The inverse problem solution consisted in determination of following parameters of the photodiode: intensity of incident radiation (q), background doping value (n), peak value of front doping (N), depth factor (L) and front surface recombination velocity (S). The shape of doping profile was figured in the form of complimentary error function. For "experimental" curves we used dependencies derived from voltage-current characteristics calculated by PC1D with nominal parameters values. Variation range represented almost one order of magnitude. The problem consists of the fact that there is an infinite set of local minimums corresponding to the selected initial points in a 5-dimensional space of variables. Hill climbing algorithm was used to find local minimums. A special algorithm to find the absolute minimum is presented in this article. Search for absolute minimum among many local minimums was done through method of consecutive approximations toward the minimum of mean square deviation. From performed calculations, we established that value of incident radiation (q) (and, as result, interior quantum efficiency of the photodiode) can be determined with 0.014% accuracy.

Paper Details

Date Published: 21 February 2011
PDF: 8 pages
Proc. SPIE 7933, Physics and Simulation of Optoelectronic Devices XIX, 79331S (21 February 2011); doi: 10.1117/12.872974
Show Author Affiliations
Aleksey Mikryukov, All-Russian Research Institute for Optical and Physical Measurement (Russian Federation)
Alexander Kovalev, All-Russian Research Institute for Optical and Physical Measurement (Russian Federation)
Anatoly A. Liberman, All-Russian Research Institute for Optical and Physical Measurement (Russian Federation)
Sergey Moskaluk, All-Russian Research Institute for Optical and Physical Measurement (Russian Federation)


Published in SPIE Proceedings Vol. 7933:
Physics and Simulation of Optoelectronic Devices XIX
Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa; Alexandre Freundlich, Editor(s)

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