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Proceedings Paper

Full-wafer thermal imaging in ultrahigh epitaxy tools
Author(s): Bernard Paquette; André Fekecs; Badii Gsib; Hubert Pelletier; Richard Arès
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Paper Abstract

The surface temperature distribution of a GaAs wafer, heated under vacuum, has been measured using a digital camera. A method is proposed to remove parasitic signals from the image. The accuracy of the thermal image is validated by comparing the results with a separate measurement from absorption band-edge spectroscopy (ABES). The thermal imaging data are observed to be within the experimental error from the ABES technique for the entire surface of the wafer. We observe a radial temperature profile with a center-to-edge difference that varies as a function of the central temperature. A difference of 25 °C is observed for a central temperature of 565 °C. This difference increases with the wafer temperature, confirming that it is due to a net heat flux escaping the wafer by its edge, which is in contact with a graphite holder. Based on these results, a solution is proposed in which the graphite wafer holder is replaced by a ceramic version.

Paper Details

Date Published: 22 September 2010
PDF: 7 pages
Proc. SPIE 7750, Photonics North 2010, 77500O (22 September 2010); doi: 10.1117/12.872967
Show Author Affiliations
Bernard Paquette, Univ. de Sherbrooke (Canada)
André Fekecs, Univ. de Sherbrooke (Canada)
Badii Gsib, Univ. de Sherbrooke (Canada)
Hubert Pelletier, Univ. de Sherbrooke (Canada)
Richard Arès, Univ. de Sherbrooke (Canada)


Published in SPIE Proceedings Vol. 7750:
Photonics North 2010
Henry P. Schriemer; Rafael N. Kleiman, Editor(s)

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