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Proceedings Paper

Linewidth enhancement factor of InAs/InP quantum dot lasers around 1.53 um
Author(s): Z. J. Jiao; Z. G. Lu; J. R. Liu; P. J. Poole; P. J. Barrios; D, Poitras; X. P. Zhang
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Paper Abstract

Linewidth enhancement factor (LEF) of InAs/InP quantum dot (QD) multi-wavelength lasers (MWL) emitting at 1.53 μm are investigated both above and below threshold. Above threshold, LEFs at three different wavelengths around the gain peak by injection locking technique are obtained to be 1.63, 1.37 and 1.59, respectively. Then by Hakki-Paoli method LEF is found to decrease with increased current and shows a value of less than 1 below threshold. These small LEF values have confirmed our InAs/InP QDs are perfect gain materials for laser devices around 1.5 μm.

Paper Details

Date Published: 22 September 2010
PDF: 7 pages
Proc. SPIE 7750, Photonics North 2010, 77501C (22 September 2010); doi: 10.1117/12.872925
Show Author Affiliations
Z. J. Jiao, National Research Council Canada (Canada)
Concordia Univ. (Canada)
Z. G. Lu, National Research Council Canada (Canada)
J. R. Liu, National Research Council Canada (Canada)
P. J. Poole, National Research Council Canada (Canada)
P. J. Barrios, National Research Council Canada (Canada)
D, Poitras, National Research Council Canada (Canada)
X. P. Zhang, Concordia Univ. (Canada)

Published in SPIE Proceedings Vol. 7750:
Photonics North 2010
Henry P. Schriemer; Rafael N. Kleiman, Editor(s)

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