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Proceedings Paper

III-nitride semiconductors for intersubband devices
Author(s): Y. Kotsar; H. Machhadani; S. Sakr; P. K. Kandaswamy; M. Tchernycheva; E. Bellet-Amalric; F. H. Julien; E. Monroy
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Paper Abstract

Extending the intersubband transitions in III-nitride nanostructures from near-infrared to longer wavelengths might have significant consequences for critical applications like imaging, remote sensing and mine detection. In this work, we analyze the potential of polar AlGaN/GaN heterostructures for this relevant spectral range.

Paper Details

Date Published: 24 January 2011
PDF: 7 pages
Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79451D (24 January 2011); doi: 10.1117/12.872893
Show Author Affiliations
Y. Kotsar, CEA, CNRS, Nanophysique et Semiconducteurs (France)
H. Machhadani, CNRS, Institut d'Electronique Fondamentale, Univ. Paris-Sud 11 (France)
S. Sakr, CNRS, Institut d'Electronique Fondamentale, Univ. Paris-Sud 11 (France)
P. K. Kandaswamy, CEA, CNRS, Nanophysique et Semiconducteurs (France)
M. Tchernycheva, CNRS, Institut d'Electronique Fondamentale, Univ. Paris-Sud 11 (France)
E. Bellet-Amalric, CEA, CNRS, Nanophysique et Semiconducteurs (France)
F. H. Julien, CNRS, Institut d'Electronique Fondamentale, Univ. Paris-Sud 11 (France)
E. Monroy, CEA, CNRS, Nanophysique et Semiconducteurs (France)


Published in SPIE Proceedings Vol. 7945:
Quantum Sensing and Nanophotonic Devices VIII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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