Share Email Print
cover

Proceedings Paper

III-nitride semiconductors for intersubband devices
Author(s): Y. Kotsar; H. Machhadani; S. Sakr; P. K. Kandaswamy; M. Tchernycheva; E. Bellet-Amalric; F. H. Julien; E. Monroy
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Extending the intersubband transitions in III-nitride nanostructures from near-infrared to longer wavelengths might have significant consequences for critical applications like imaging, remote sensing and mine detection. In this work, we analyze the potential of polar AlGaN/GaN heterostructures for this relevant spectral range.

Paper Details

Date Published: 24 January 2011
PDF: 7 pages
Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79451D (24 January 2011); doi: 10.1117/12.872893
Show Author Affiliations
Y. Kotsar, CEA, CNRS, Nanophysique et Semiconducteurs (France)
H. Machhadani, CNRS, Institut d'Electronique Fondamentale, Univ. Paris-Sud 11 (France)
S. Sakr, CNRS, Institut d'Electronique Fondamentale, Univ. Paris-Sud 11 (France)
P. K. Kandaswamy, CEA, CNRS, Nanophysique et Semiconducteurs (France)
M. Tchernycheva, CNRS, Institut d'Electronique Fondamentale, Univ. Paris-Sud 11 (France)
E. Bellet-Amalric, CEA, CNRS, Nanophysique et Semiconducteurs (France)
F. H. Julien, CNRS, Institut d'Electronique Fondamentale, Univ. Paris-Sud 11 (France)
E. Monroy, CEA, CNRS, Nanophysique et Semiconducteurs (France)


Published in SPIE Proceedings Vol. 7945:
Quantum Sensing and Nanophotonic Devices VIII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

© SPIE. Terms of Use
Back to Top