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Proceedings Paper

Spintronics using Si
Author(s): Hanan Dery; Pengke Li
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Paper Abstract

The spin polarization of carriers in a direct-gap semiconductor is readily quantified by measuring the circular polarization of the recombination light luminescence. However, in silicon, owing to its indirect band-gap, such a direct connection between spin polarization and luminescence has been conspicuously absent. This missing link is established with a theory that provides intuitive relations for phonon-assisted optical transitions between the conduction and valence band edges. The theory is applied to explain recent experiments on spin injection in silicon and further elucidate its desirable spin-dependent properties.

Paper Details

Date Published: 17 January 2011
PDF: 13 pages
Proc. SPIE 7943, Silicon Photonics VI, 794313 (17 January 2011); doi: 10.1117/12.872881
Show Author Affiliations
Hanan Dery, Univ. of Rochester (United States)
Pengke Li, Univ. of Rochester (United States)


Published in SPIE Proceedings Vol. 7943:
Silicon Photonics VI
Joel A. Kubby; Graham T. Reed, Editor(s)

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