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Proceedings Paper

Modeling of III-nitride light-emitting diodes: progress, problems, and perspectives
Author(s): Sergey Yu. Karpov
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Paper Abstract

Recent progress in III-nitride LED modeling is reviewed with the focus on physical models that provide a better understanding of such hot issues, as factors limiting the internal quantum efficiency of light emission and high-current efficiency droop, polarization doping in graded-composition III-nitride alloys and its utilization in LEDs, current crowding in LED dice and its impact on the light extraction efficiency, and optimal light conversion in white LED lamps. Specific features of III-nitride materials, their impact on the LED operation, and models accounting for these features are considered. Insufficient understanding of transport mechanisms of non-equilibrium electrons and holes and their localization in InGaN inhomogeneous active regions are discussed along with other still unsolved problems. Influence of technological factors on LED heterostructures and their operation is argued in the context of further model developments.

Paper Details

Date Published: 3 March 2011
PDF: 12 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79391C (3 March 2011); doi: 10.1117/12.872842
Show Author Affiliations
Sergey Yu. Karpov, STR Group-Soft-Impact, Ltd. (Russian Federation)


Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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