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Proceedings Paper

III-nitride nanowires: novel materials for solid-state lighting
Author(s): George T. Wang; Qiming Li; Jianyu Huang; A. Alec Talin; Andrew Armstrong; Prashanth C. Upadhya; Rohit P. Prasankumar
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Paper Abstract

Although planar heterostructures dominate current solid-state lighting architectures (SSL), 1D nanowires have distinct and advantageous properties that may eventually enable higher efficiency, longer wavelength, and cheaper devices. However, in order to fully realize the potential of nanowire-based SSL, several challenges exist in the areas of controlled nanowire synthesis, nanowire device integration, and understanding and controlling the nanowire electrical, optical, and thermal properties. Here recent results are reported regarding the aligned growth of GaN and III-nitride core-shell nanowires, along with extensive results providing insights into the nanowire properties obtained using cutting-edge structural, electrical, thermal, and optical nanocharacterization techniques. A new top-down fabrication method for fabricating periodic arrays of GaN nanorods and subsequent nanorod LED fabrication is also presented.

Paper Details

Date Published: 9 February 2011
PDF: 9 pages
Proc. SPIE 7954, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV, 79540T (9 February 2011); doi: 10.1117/12.872776
Show Author Affiliations
George T. Wang, Sandia National Labs. (United States)
Qiming Li, Sandia National Labs. (United States)
Jianyu Huang, Sandia National Labs. (United States)
A. Alec Talin, NIST (United States)
Andrew Armstrong, Sandia National Labs. (United States)
Prashanth C. Upadhya, Los Alamos National Lab. (United States)
Rohit P. Prasankumar, Los Alamos National Lab. (United States)

Published in SPIE Proceedings Vol. 7954:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Norbert Linder, Editor(s)

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