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Proceedings Paper

Novel approaches to realizing chemical lift-off of GaN epilayer from sapphire substrate
Author(s): Ray-Hua Horng; Tsung-Yen Tsai; Cheng-Ying Yen; Ming-Tsung Hung; Chun-Ting Pan; Dong-Sing Wuu
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Paper Abstract

Chemical lift-off (CLO) technique has been paid more attention since no damages will be induced to GaN epi-layer during the epilayer lift-off process. In this study two novel CLO approaches were used to separate GaN epilayer from sapphire substrate. One is using Ga2O3sacrificial layer deposited by pulsed laser deposition. The other is using a stripe patterned SiO2grown by PECVD. Afterwards, the CLO of GaN epilayers grown on these two templates via metal organic chemical vapor deposition from sapphire substrate was successfully realized with a hydrofluoric acid as an etchant.

Paper Details

Date Published: 9 February 2011
PDF: 8 pages
Proc. SPIE 7954, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV, 795417 (9 February 2011); doi: 10.1117/12.872570
Show Author Affiliations
Ray-Hua Horng, National Cheng Kung Univ. (Taiwan)
National Chung Hsing Univ. (Taiwan)
Tsung-Yen Tsai, National Chung Hsing Univ. (Taiwan)
Cheng-Ying Yen, National Chung Hsing Univ. (Taiwan)
Ming-Tsung Hung, National Chung Hsing Univ. (Taiwan)
Chun-Ting Pan, National Chung Hsing Univ. (Taiwan)
Dong-Sing Wuu, National Chung Hsing Univ. (Taiwan)


Published in SPIE Proceedings Vol. 7954:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Norbert Linder, Editor(s)

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