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Proceedings Paper

670 nm nearly diffraction limited tapered lasers with more than 30% conversion efficiency and 1 W cw and 3 W pulsed output power
Author(s): B. Sumpf; P. Adamiec; M. Zorn; H. Wenzel; G. Erbert; G. Tränkle
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Paper Abstract

Highly efficient 670 nm-tapered lasers with a vertical divergence of 31° (FWHM) will be presented. The devices are based on a GaInP single quantum well embedded in AlGaInP waveguide layers. Compared to previously reported material, the structure has an improved material quality with a transparency current density jtr = 165 A/cm2, an internal efficiency ηi = 0.75, small internal losses αi = 1.2 cm-1, and a good temperature stability with T0 = 120 K. 2 mm long tapered lasers were fabricated in a standard process, using reactive ion etching for the index-guided structures and ion implantation for the definition of the contact window in the tapered section. The properties of devices with 500 μm or 750 μm long ridge waveguide (RW) section and a flared section with 3° or 4° taper angle will be compared. In CW-operation an output power up to P = 1 W with a conversion efficiency of 30% and a beam propagation ratio M2 (2nd moments) smaller than 2.3 were obtained. In pulsed mode up to 3.3 W output power was measured.

Paper Details

Date Published: 17 February 2011
PDF: 8 pages
Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 79530Z (17 February 2011); doi: 10.1117/12.872411
Show Author Affiliations
B. Sumpf, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
P. Adamiec, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
M. Zorn, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
H. Wenzel, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
G. Erbert, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
G. Tränkle, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)


Published in SPIE Proceedings Vol. 7953:
Novel In-Plane Semiconductor Lasers X
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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