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Proceedings Paper

Novel terahertz emission devices based on efficient optical frequency conversion in GaAs/AlAs coupled multilayer cavity structures on high-index substrates
Author(s): Takahiro Kitada; Fumiya Tanaka; Tomoya Takahashi; Ken Morita; Toshiro Isu
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Paper Abstract

GaAs/AlAs coupled multilayer cavity structures on high-index substrates have been proposed as novel terahertz emission devices. Two cavity modes with an optical frequency difference in the terahertz region are realized when two cavity layers are coupled by an intermediate distributed Bragg reflector multilayer. Optical responses to ultrashort laser pulses have been simulated using the transfer matrix method. Interference between the enhanced light fields of the cavity modes was demonstrated when they were simultaneously excited by 100 fs Gaussian pulses. Extremely strong sum-frequency generation was experimentally observed in the (113)B coupled multilayer cavity. We also found that the polarization control by wafer-bonding might be one of the best ways to generate terahertz difference-frequency signal of two modes.

Paper Details

Date Published: 21 February 2011
PDF: 6 pages
Proc. SPIE 7937, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, 79371H (21 February 2011); doi: 10.1117/12.872103
Show Author Affiliations
Takahiro Kitada, Univ. of Tokushima (Japan)
Fumiya Tanaka, Univ. of Tokushima (Japan)
Tomoya Takahashi, Univ. of Tokushima (Japan)
Ken Morita, Univ. of Tokushima (Japan)
Toshiro Isu, Univ. of Tokushima (Japan)


Published in SPIE Proceedings Vol. 7937:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV
Kong-Thon Tsen; Jin-Joo Song; Markus Betz; Abdulhakem Y. Elezzabi, Editor(s)

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