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Proceedings Paper

Asymmetrical design for non-relaxed near-UV AlGaN/GaN distributed Bragg reflectors
Author(s): T. Moudakir; M. Abid; B.-T. Doan; E. Demarly; S. Gautier; G. Orsal; J. Jacquet; A. Ougazzaden; F. Genty
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Paper Abstract

Towards the development of high efficient GaN-based Vertical Cavity devices, the fabrication of cracks-free high reflective semiconductor mirrors is still an issue. For near-UV operating devices, one of the best solution is the use of AlGaN/GaN materials family. With a relatively high Al molar fraction in AlGaN, a large enough index contrast can be achieved to fabricate high reflectivity mirrors. However, the lattice mismatch between AlGaN and GaN increases with the Al molar fraction and induces a lot of cracks in the structure which affect its optical and electrical properties. Moreover, for a regrowth of an active layer on the top of the mirror, it is necessary to suppress crack generations to achieve a smooth surface. In this work, asymmetrical designs were investigated for the modeling of fully-strained AlGaN/GaN distributed Bragg Reflectors with crack-free surfaces. First, the critical thickness of MOVPE-grown AlGaN on GaN-on-sapphire templates was experimentally determined and modeled. Then, several AlGaN/GaN mirrors with various Al molar fractions and asymmetry factors were simulated demonstrating that non relaxed DBRs could be obtained with adequate parameters. Finally, it has also been shown that there is a best suited Al molar fraction in AlGaN for each DBR centering wavelength.

Paper Details

Date Published: 11 October 2010
PDF: 8 pages
Proc. SPIE 7847, Optoelectronic Devices and Integration III, 78470B (11 October 2010); doi: 10.1117/12.871826
Show Author Affiliations
T. Moudakir, Supélec (France)
Georgia Tech-CNRS (France)
M. Abid, Georgia Tech-CNRS (France)
B.-T. Doan, Supélec (France)
E. Demarly, Supélec (France)
S. Gautier, LMOPS, Univ. Paul Verlaine Metz (France)
Georgia Tech-CNRS (France)
G. Orsal, LMOPS, Univ. Paul Verlaine Metz (France)
Georgia Tech-CNRS (France)
J. Jacquet, Supélec (France)
LMOPS, Univ. Paul Verlaine Metz (France)
Georgia Tech-CNRS (France)
A. Ougazzaden, Georgia Tech-CNRS (France)
F. Genty, Supélec (France)
LMOPS, Univ. Paul Verlaine Metz (France)
Georgia Tech-CNRS (France)

Published in SPIE Proceedings Vol. 7847:
Optoelectronic Devices and Integration III
Xuping Zhang; Hai Ming; Alan Xiaolong Wang, Editor(s)

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