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Proceedings Paper

Recent developments in AlGaN-based laser diodes for short ultraviolet region
Author(s): Harumasa Yoshida; Masakazu Kuwabara; Yoji Yamashita; Kazuya Uchiyama; Hirofumi Kan
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Paper Abstract

We present a review of nitride laser diodes lasing at short ultraviolet wavelengths. The room temperature operations of the AlGaN based laser diodes under pulsed current mode are presented. The optical and temperature characteristics as well as the carrier recombination of the devices are also investigated.

Paper Details

Date Published: 4 March 2011
PDF: 8 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79390V (4 March 2011); doi: 10.1117/12.871742
Show Author Affiliations
Harumasa Yoshida, Hamamatsu Photonics K.K. (Japan)
Masakazu Kuwabara, Hamamatsu Photonics K.K. (Japan)
Yoji Yamashita, Hamamatsu Photonics K.K. (Japan)
Kazuya Uchiyama, Hamamatsu Photonics K.K. (Japan)
Hirofumi Kan, Hamamatsu Photonics K.K. (Japan)


Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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