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Proceedings Paper

Point defects in GaN and related group-III nitrides studied by means of positron annihilation
Author(s): Akira Uedono; Shoji Ishibashi; Shigefusa F. Chichibu; Katsuhiro Akimoto
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Paper Abstract

Positron annihilation is a non-destructive technique for investigating vacancy-type defects in condensed matter. When a positron is implanted into a sample, it annihilates with an electron and emits two 511-keV γ quanta. From measurements of Doppler broadening spectra of the annihilation radiation and positron lifetimes, one can detect point defects such as monovacancies, vacancy clusters, and vacancy-impurity complexes. The regions sampled can range from the surface to a depth on the order of microns. In the present study, we have used the positron annihilation technique to study relationship between the impurity doping and vacancies in GaN. Defects in ion-implanted GaN and their annealing properties were studied. The defects introduced by the implantation were identified as divacancies, and the defect reaction during isochronal annealing were found to depend on ion spices. A relationship between intra-4f transitions of Er and vacancies was studied. A correlation between the defect concentration and the PL intensity was observed. We will demonstrate that the positron annihilation technique is sensitive to vacancy-type defects in GaN, and it can contribute to the development of optical and electronic devices based such materials.

Paper Details

Date Published: 4 March 2011
PDF: 10 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79390I (4 March 2011); doi: 10.1117/12.871611
Show Author Affiliations
Akira Uedono, Univ. of Tsukuba (Japan)
Shoji Ishibashi, National Institute of Advanced Industrial Science and Technology (Japan)
Shigefusa F. Chichibu, Tohoku Univ. (Japan)
Katsuhiro Akimoto, Univ. of Tsukuba (Japan)


Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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