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Proceedings Paper

Silicon solar cells with polysilicon emitters and back surface fields
Author(s): Jiang Du; Lyall P. Berndt; N. Garry Tarr
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Paper Abstract

The first solar cells using in-situ doped polysilicon contacts to form both emitter and back surface field (BSF) regions are reported. The use of polysilicon contacts permits extremely low thermal budget processing (maximum 850°C 5 sec for dopant activation), preserving substrate properties. The effectiveness of the BSF is best seen with backside illumination, where the photocurrent under natural sunlight is found to be over 30% of that obtained with frontside illumination, even though the substrate thickness is comparable to the minority carrier diffusion length. The applicability of the structure to bifacial operation is considered.

Paper Details

Date Published: 22 September 2010
PDF: 8 pages
Proc. SPIE 7750, Photonics North 2010, 77502W (22 September 2010); doi: 10.1117/12.871608
Show Author Affiliations
Jiang Du, Carleton Univ. (Canada)
Lyall P. Berndt, Carleton Univ. (Canada)
N. Garry Tarr, Carleton Univ. (Canada)

Published in SPIE Proceedings Vol. 7750:
Photonics North 2010
Henry P. Schriemer; Rafael N. Kleiman, Editor(s)

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