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Proceedings Paper

Control of characteristic performance by patterned structure in light-emitting diodes
Author(s): Jong Hyeob Baek; Sang-Mook Kim; In-Hwan Lee; Nam Hwang
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Paper Abstract

Various types of nano-to-micron scale patterned structure have been employed into nitride light-emitting diodes (LEDs) in order to investigate the optical performances of device. The patterned structure was formed on top of the LED epitaxial structure or was embedded between epitaxial layers and sapphire substrate. The patterned structure affected to the LED performances in terms of light distribution and anisotropic increase of light extraction as well as increase of external quantum efficiency. The controllability of light extraction by forming a patterned structure with different index material is applicable to flip chip devices or chips on board in which light is supposed to be extracted toward a certain direction with the straight forward directionality. The index matched nano-patterned AlN template played such a role of anisotropic directionality of light extraction in the device. Periodic (photonic band gap) and non-periodic (random hole) patterned structure also showed different extraction efficiency and characteristics of light distribution. The experimental result was well matched with the simulated estimation.

Paper Details

Date Published: 24 January 2011
PDF: 6 pages
Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79451B (24 January 2011); doi: 10.1117/12.871428
Show Author Affiliations
Jong Hyeob Baek, Korea Photonics Technology Institute (Korea, Republic of)
Sang-Mook Kim, Korea Photonics Technology Institute (Korea, Republic of)
In-Hwan Lee, Chonbuk National Univ. (Korea, Republic of)
Nam Hwang, Korea Photonics Technology Institute (Korea, Republic of)

Published in SPIE Proceedings Vol. 7945:
Quantum Sensing and Nanophotonic Devices VIII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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