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Proceedings Paper

Advances in nano-enabled GaN photonic devices
Author(s): W. N. Wang; P. A. Shields; C. Liu; D. W. E. Allsopp; F. Causa
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Paper Abstract

In this work, the results are presented of a nanorod LED array. If the lateral size of the nanorods is small enough, it is possible to achieve a degree of lateral confinement. If the nanorods are ordered into a suitable photonic lattice, then this will reduce the lateral spontaneous emission and enhance emission along the vertical axis via the Purcell effect. Additionally there is a degree of dislocation filtering that can occur [1]. However, one potential drawback of this device is the large free surface that borders the multi-quantum well active region. Nevertheless, it has been shown that the surface recombination in the nitride materials is the lowest of all III-V semiconductors. Results of SEM, PL, EL, and far field pattern are presented to compare the progressive effect of using photo-assisted electroless and wet etching [2]. It can be seen that over time the photo-assisted electroless method clearly delineates the active MQW region, possibly as a result of the different etch rate of InGaN. Alternatively, a purely chemical etching method was used. With a narrowing of the nanorods, there is a progressive blue shift of the photoluminescence peak. The optical image of the emission shows that there are well-defined lines of enhanced light propagation that match the symmetry of the nanorod array, thus showing there is a photonic crystal effect.

Paper Details

Date Published: 24 January 2011
PDF: 10 pages
Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 794523 (24 January 2011); doi: 10.1117/12.871427
Show Author Affiliations
W. N. Wang, Univ. of Bath (United Kingdom)
P. A. Shields, Univ. of Bath (United Kingdom)
C. Liu, Univ. of Bath (United Kingdom)
D. W. E. Allsopp, Univ. of Bath (United Kingdom)
F. Causa, Univ. of Bath (United Kingdom)


Published in SPIE Proceedings Vol. 7945:
Quantum Sensing and Nanophotonic Devices VIII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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