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Proceedings Paper

Improvement of OLED properties with the AlN insulated layer
Author(s): Chunling Liu; Jin Wang; Chunwu Wang; Lei Zhao; Wenlong Jiang
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Paper Abstract

The thin aluminum nitride(AlN) film using as an insulating layer was inserted between the anode (ITO) and the NPB organic film in the organic light-emitting devices(OLED) for the structure being K9/ITO/AlN/NPB/Alq3/LiF/Al.The effect of the different thickness AlN film on the device performance was investigated. After optimization, improvement of OLEDs properties is biggest when the AlN film thickness is about 0.4nm.Such a structure with AlN layer facilitates the increase of current density and decrease of threshold voltage, resulting in an improved luminance and energy efficiency. The average luminance increased by about 30% and an improvement of 21.8% on the average current density. The lifetime experiment of the devices has proved an improvement on stability because of inserted AlN film. This phenomenon is mainly because of the insulating capability of the aluminum nitride coating and the passivation role of AlN film to the ITO surface. The processing is simple and high efficient, can be widely applied to the OLED devices.

Paper Details

Date Published: 15 November 2010
PDF: 6 pages
Proc. SPIE 7852, LED and Display Technologies, 78521G (15 November 2010); doi: 10.1117/12.871371
Show Author Affiliations
Chunling Liu, Jilin Normal Univ. (China)
Jin Wang, Jilin Normal Univ. (China)
Chunwu Wang, Jilin Normal Univ. (China)
Lei Zhao, Jilin Normal Univ. (China)
Wenlong Jiang, Jilin Normal Univ. (China)


Published in SPIE Proceedings Vol. 7852:
LED and Display Technologies
Gang Yu; Yanbing Hou, Editor(s)

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