Share Email Print

Proceedings Paper

Unified model for the GaN LED efficiency droop
Author(s): Joachim Piprek
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Nitride-based light-emitting diodes (LEDs) suffer from a reduction (droop) of the internal quantum efficiency with increasing injection current. This droop phenomenon is currently the subject of intense research worldwide, as it delays general lighting applications of GaN-based LEDs. Several proposals have been forwarded to explain the efficiency droop. Among the suggested droop mechanisms are defect-related recombination, Auger recombination, and electron leakage. However, different sample preparation and measurement conditions as well as the application of different models lead to a confusing and sometimes contradicting variety of efficiency droop observations and explanations. This paper combines different droop models in a simple yet unified framework and it helps to bring more clarity to the ongoing droop discussion.

Paper Details

Date Published: 3 March 2011
PDF: 4 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 793916 (3 March 2011); doi: 10.1117/12.871105
Show Author Affiliations
Joachim Piprek, NUSOD Institute LLC (United States)

Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

© SPIE. Terms of Use
Back to Top