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Proceedings Paper

Defect printability analysis in negative tone development lithography
Author(s): Junggun Heo; Changil Oh; Junghyung Lee; Minkyung Park; Hyungsuk Seo; Cheolkyu Bok; Donggyu Yim; Sungki Park
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Paper Abstract

In general, contact hole patterning has various challenges such as narrow process window, large mask error enhancement factor (MEEF), poor circularity, and low image contrast compared to line & space patterning. For that reason, it is difficult to make sub-50nm size contact hole with 193nm ArF immersion single exposure. In order to achieve sub-40nm contact hole patterning, we have need of shrink bias over 20nm. However, conventional pattern shrink technology such as resist reflow process is difficult to get shrink bias over 20nm because the shrink volume gets smaller as the pitch gets narrower. Recently several authors have specifically noted the advantages of using negative tone development for patterning narrow trenches. A new negative tone imaging with application of new developer to conventional ArF immersion resist materials is proposed for small contact hole pattern formation. Significantly better LWR and resolution on small contact hole pattern were observed with this negative tone development compared with positive tone development. In this paper, we will introduce the experimental results of sub-40nm contact hole patterning using negative tone systems for contact hole patterning. We will report the results of comprehensive studies of defects originating in negative tone photolithography and reveal the defect generation mechanism of each negative tone imaging-specific defect types.

Paper Details

Date Published: 15 April 2011
PDF: 7 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79721K (15 April 2011); doi: 10.1117/12.871048
Show Author Affiliations
Junggun Heo, Hynix Semiconductor Inc. (Korea, Republic of)
Changil Oh, Hynix Semiconductor Inc. (Korea, Republic of)
Junghyung Lee, Hynix Semiconductor Inc. (Korea, Republic of)
Minkyung Park, Hynix Semiconductor Inc. (Korea, Republic of)
Hyungsuk Seo, Hynix Semiconductor Inc. (Korea, Republic of)
Cheolkyu Bok, Hynix Semiconductor Inc. (Korea, Republic of)
Donggyu Yim, Hynix Semiconductor Inc. (Korea, Republic of)
Sungki Park, Hynix Semiconductor Inc. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

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