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Proceedings Paper

Prospects and challenges of InN-based nanowire heterostructures and devices integrated on Si
Author(s): Z. Mi; H. P. T. Nguyen; K. Cui; X. Han; S. Zhang; Y.-L. Chang
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Paper Abstract

We report on the molecular beam epitaxial growth and characterization of In(Ga)N nanowires on Si(111) substrates. We also describe the growth and optical properties of InGaN/GaN dot-in-a-wire heterostructures on Si(111) substrates with emission in the green, yellow, and red wavelength range. The design, fabrication, and characterization of In(Ga)N nanowire solar cells and LEDs are discussed. InN p-i-n axial nanowire homojunction solar cells exhibit a promising short-circuit current density of ~ 14.4 mA/cm2 and an energy conversion efficiency of ~ 0.68% under 1-sun, AM1.5G illumination. Strong green, yellow, and amber emission has also been achieved from InGaN/GaN dot-in-a-wire LEDs at room temperature.

Paper Details

Date Published: 15 November 2010
PDF: 6 pages
Proc. SPIE 7847, Optoelectronic Devices and Integration III, 784702 (15 November 2010); doi: 10.1117/12.870760
Show Author Affiliations
Z. Mi, McGill Univ. (Canada)
H. P. T. Nguyen, McGill Univ. (Canada)
K. Cui, McGill Univ. (Canada)
X. Han, McGill Univ. (Canada)
S. Zhang, McGill Univ. (Canada)
Y.-L. Chang, McGill Univ. (Canada)

Published in SPIE Proceedings Vol. 7847:
Optoelectronic Devices and Integration III
Xuping Zhang; Hai Ming; Alan Xiaolong Wang, Editor(s)

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