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Proceedings Paper

Properties study of vanadium oxide thin films annealed in N[sub]2[/sub]/H[sub]2[/sub] ambience
Author(s): Liulian Chen; Bin Ma; Yongming Shi; Houming Zhai; Dahan Qian
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Paper Abstract

Vanadium oxide thin films fabricated by reactive magnetron sputtering were annealed in N2/H2 ambience for 1, 3, 5 and 7 hours at 450°C. Changes in electrical & structural properties and chemical composition were studied. From R-T measurement and calculation, it was found that both square resistance(R) and temperature coefficient of resistance(TCR) of the films increased after annealing. Atomic force microscopy(AFM) analysis revealed that both grain size and surface roughness were aggrandized greatly after annealing. X-ray diffraction(XRD) analysis showed that new phases V2O5(0 0 1) and VO2(0 1 1) appeared in the annealed films and the grain size varied between 10~40nm. X-ray photo-electronic spectrum(XPS) analysis demonstrated variations in depth of the atomic ratios of O:V and the vanadium valence states distribution for different time annealed films. Following the above analysis, correlation between macroscopic and microscopic characteristics of the films is elaborated.

Paper Details

Date Published: 15 November 2010
PDF: 5 pages
Proc. SPIE 7854, Infrared, Millimeter Wave, and Terahertz Technologies, 78541Y (15 November 2010); doi: 10.1117/12.870722
Show Author Affiliations
Liulian Chen, Shanghai Institute of Technical Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Bin Ma, Shanghai Institute of Technical Physics (China)
Yongming Shi, Shanghai Institute of Technical Physics (China)
Houming Zhai, Shanghai Institute of Technical Physics (China)
Dahan Qian, Shanghai Institute of Technical Physics (China)
Graduate School of the Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 7854:
Infrared, Millimeter Wave, and Terahertz Technologies
Cunlin Zhang; Xi-Cheng Zhang; Peter H. Siegel; Li He; Sheng-Cai Shi, Editor(s)

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