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Proceedings Paper

Exponential-doping GaAs NEA photocathode grown by MBE
Author(s): Junju Zhang; Yijun Zhang; Yujie Du; Biao Li; Xiaoqian Fu; Benkang Chang
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Paper Abstract

To improve the performance of GaAs NEA photocathodes, an exponential-doping structure GaAs material has been put forward, in which from the GaAs bulk-to-surface doping concentration is distributed gradiently from high to low. We apply this exponential-doping GaAs structure to the transmission-mode GaAs photocathodes. This sample was grown on the high quality p-type GaAs (100) substrate by MBE with p-type Be doping. We have calculated the band-bending energy in exponential-doping GaAs emission-layer, and the total band-bending energy is 59 meV which helps improve the photoexcited electrons movement towards surface for the thin epilayer. The integrated sensitivity of the two exponential-doping GaAs photocathode samples with different thickness reaches 1228uA/lm and 1547uA/lm respectively.

Paper Details

Date Published: 17 November 2010
PDF: 6 pages
Proc. SPIE 7847, Optoelectronic Devices and Integration III, 78472Y (17 November 2010); doi: 10.1117/12.870665
Show Author Affiliations
Junju Zhang, Nanjing Univ. of Science and Technology (China)
Yijun Zhang, Nanjing Univ. of Science and Technology (China)
Yujie Du, Nanjing Univ. of Science and Technology (China)
Biao Li, Nanjing Univ. of Science and Technology (China)
Xiaoqian Fu, Nanjing Univ. of Science and Technology (China)
Benkang Chang, Nanjing Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 7847:
Optoelectronic Devices and Integration III
Xuping Zhang; Hai Ming; Alan Xiaolong Wang, Editor(s)

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