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Proceedings Paper

Resolution capability of SFET with slit and dipole illumination
Author(s): Yuusuke Tanaka; Kentaro Matsunaga; Shunko Magoshi; Seiichiro Shirai; Kazuo Tawarayama; Hiroyuki Tanaka
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Paper Abstract

A high-resolution EUV exposure tool is needed to facilitate the development of EUV resists and masks. Since the EUV small-field exposure tool (SFET) has a high numerical aperture (NA = 0.3), low aberration & flare, and excellent stage stability, it should be able to resolve fine L/S patterns for the half-pitch 22-nm & 16-nm nodes. In this study, we evaluated the resolution capability of the SFET and obtained 22-nm L/S patterns with x-slit illumination and clear modulation of 16-nm L/S patterns with x-dipole illumination. The resolution limit of the SFET seems to be about 15 nm. The main cause of pattern degradation in 16-nm L/S is probably resist blur. To obtain good shapes for this pattern size, the resist blur of less than 3.5 nm (σ) is required. The use of y-slit illumination was found to reduce the linewidth roughness (LWR) of resist patterns. Further reduction of the LWR requires a higher image contrast and a smaller flare. Due to the central obscuration, the image contrast of the SFET is sensitive to the change of pupil fill. The degradation in the collector & DMT should be reduced to ensure stable aerial images. This work was supported in part by NEDO.

Paper Details

Date Published: 5 April 2011
PDF: 11 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79690Q (5 April 2011); doi: 10.1117/12.870332
Show Author Affiliations
Yuusuke Tanaka, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Kentaro Matsunaga, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Shunko Magoshi, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Seiichiro Shirai, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Kazuo Tawarayama, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroyuki Tanaka, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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