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Proceedings Paper

Investigation of hole injection characteristics in NPB/Alq3 heterojunction devices
Author(s): Denghui Xu; Xiong Li; Zhaoyue Lv; Ye Zou; Zhenbo Deng
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Paper Abstract

The effect of ozone and O2 plasma treatment of ITO on the charge-carrier injection in ITO/N, N'-bis-(1-napthyl)-N, N'- diphenyl-1,1'biphenyl-4,4'-diamine (NPB)/tris(8-quinolinolato)-aluminum (Alq3)/Al organic heterojunction devices have been studied through the analysis of current-voltage characteristics. From the experiments, it is demonstrated that the average electric field inside Alq3 layer is larger than the average field in the NPB layer. The investigation demonstrated that the hole injection into NPB from anode is Fowler-Nordheim (FN) tunneling and the electron injection into Alq3 from cathode is Richardson-Schottky (RS) thermonic emission.

Paper Details

Date Published: 16 November 2010
PDF: 6 pages
Proc. SPIE 7852, LED and Display Technologies, 785218 (16 November 2010); doi: 10.1117/12.870303
Show Author Affiliations
Denghui Xu, Beijing Technology and Business Univ. (China)
Xiong Li, Beijing Technology and Business Univ. (China)
Zhaoyue Lv, Beijing Jiaotong Univ. (China)
Ye Zou, Beijing Jiaotong Univ. (China)
Zhenbo Deng, Beijing Jiaotong Univ. (China)


Published in SPIE Proceedings Vol. 7852:
LED and Display Technologies
Gang Yu; Yanbing Hou, Editor(s)

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