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Proceedings Paper

The optical and electrical properties of W-doping VOx thin film
Author(s): He-qin Li; Xiao-xiong He; Lin-fei Shao
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Paper Abstract

The thin films of W-doped VOx, were synthesized onto glass substrates using reactive DC magnetic co-sputtering deposition technique. The optimum synthetic process was obtained when the gas pressure was 2.0Pa , the ratio of O2/Ar was 1.0:15, the sputtering powers were 120W for vanadium target and 45W for tungsten target during 30minutes, and all W-doped VOx films were annealed in nitrogen atmosphere at 450°C for 2 hours. The structures of films were characterized by X-ray diffraction. The effects of W dopant on the semiconductor to metal phase transition of bare VOx were investigated with measuring the dependence of electrical resistance on temperature and the infrared transmittance spectra. Remarkably strong effects of W doping were observed on VOx films both the optical and electrical properties. The IR transmittance was decreased from 67.46% to 44.86%, while the transition temperature from monoclinic semiconductor to tetragonal metal was decreased from 68°C to 48°C through W-doped. In addition to, the temperature coefficient of resistance was changed from -1.48 %/ °C into -1.71 %/ °C for W-doped VOx film at corresponding transition temperature.

Paper Details

Date Published: 4 November 2010
PDF: 6 pages
Proc. SPIE 7854, Infrared, Millimeter Wave, and Terahertz Technologies, 785418 (4 November 2010); doi: 10.1117/12.870292
Show Author Affiliations
He-qin Li, Hefei Univ. of Technology (China)
Xiao-xiong He, Hefei Univ. of Technology (China)
Lin-fei Shao, Hefei Univ. of Technology (China)

Published in SPIE Proceedings Vol. 7854:
Infrared, Millimeter Wave, and Terahertz Technologies
Cunlin Zhang; Xi-Cheng Zhang; Peter H. Siegel; Li He; Sheng-Cai Shi, Editor(s)

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