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Proceedings Paper

Analysis of strain energy in nanowire heterostructures with component gradient buffer section
Author(s): Yang Liu; Xian Ye; Hui Huang; Jingwei Guo; Xiaomin Ren; Yongqing Huang
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Paper Abstract

In this paper, analytical method is employed to analyze the system strain energy and critical diameter of one kind of longitudinally heterostructure nanowire which contains component gradient buffer sections. Based on the critical diameter model of F. Glas in heterostructure nonawires, calculation has been made to research on how does single-layer thickness and total thickness of gradient buffer effect the critical radius of the system. The results illustrate that component gradient buffer layer can effectively reduce the system strain energy, and the thinner the single-layer buffer section thickness , the more obvious the improvement of its critical radius; if the lattice mismatch of the heterostructure nonawires is smaller, the strain energy can be reduced more significantly, also the greater rate of increase of its critical radius. The freedom cut of the nonawires diameter can be realized by controlling the component and thickness of buffer sections. Using Au assistant MOVCD method, we can get high-quality nonawires with component gradient buffer sections, in contrast to the bad quality SEM image of the nonawires without buffer layers, which effectively prove the above conclusions.

Paper Details

Date Published: 13 November 2010
PDF: 8 pages
Proc. SPIE 7844, Semiconductor Lasers and Applications IV, 78440S (13 November 2010); doi: 10.1117/12.870267
Show Author Affiliations
Yang Liu, Beijing Univ. of Posts and Telecommunications (China)
Xian Ye, Beijing Univ. of Posts and Telecommunications (China)
Hui Huang, Beijing Univ. of Posts and Telecommunications (China)
Jingwei Guo, Beijing Univ. of Posts and Telecommunications (China)
Xiaomin Ren, Beijing Univ. of Posts and Telecommunications (China)
Yongqing Huang, Beijing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 7844:
Semiconductor Lasers and Applications IV
Ning-Hua Zhu; Jinmin Li; Farzin Amzajerdian; Hiroyuki Suzuki, Editor(s)

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