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Proceedings Paper

1.54-μm electroluminescence from Si-rich erbium silicate
Author(s): G. Z. Ran; Y. Yin; F. Wei; W. J. Xu; G. G. Qin
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Paper Abstract

We added excess silicon into erbium silicate to form silicon-rich erbium silicate (SRES) films on p-type silicon substrates by magnetron sputtering technique. After annealed at 850°C in N2, the element contents of erbium, silicon and oxygen in the films were estimated by Rutherford backscattering spectroscopy. Room temperature Er3+ 1.54 μm electroluminescence from the structure of indium tin oxide (ITO)/SRES/p-Si has been studied. Its electroluminescence intensity can be markedly enhanced by optimizing the excess Si content in the SRES film.

Paper Details

Date Published: 15 November 2010
PDF: 6 pages
Proc. SPIE 7847, Optoelectronic Devices and Integration III, 78470X (15 November 2010); doi: 10.1117/12.870220
Show Author Affiliations
G. Z. Ran, Peking Univ. (China)
Y. Yin, Peking Univ. (China)
F. Wei, Peking Univ. (China)
W. J. Xu, Peking Univ. (China)
G. G. Qin, Peking Univ. (China)


Published in SPIE Proceedings Vol. 7847:
Optoelectronic Devices and Integration III
Xuping Zhang; Hai Ming; Alan Xiaolong Wang, Editor(s)

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