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Proceedings Paper

High power widely tunable all-solid-state pulsed titanium-doped sapphire laser
Author(s): Quan Sheng; Xin Ding; Xue Li; Na Chen; Bin Li; Xuanyi Yu; Wuqi Wen; Rui Zhou; Jianquan Yao
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Paper Abstract

We report a pulsed, widely tunable Ti:sapphire laser pumped by an all-solid-state Q-switched intra-cavity frequency-doubled Nd:YAG laser with repetition rate of 7 KHz. Using two dense flint glass prisms as dispersion elements, the output wavelength could be continuously tuned over 675-970 nm, with spectral line-width of 2 nm. Gain-switching characteristics of Ti: sapphire laser shortened the pulse width to 17.6 ns. Well mode matching between pump and laser beam in the sapphire crystal and thermal design of the cavity ensured stable, efficient laser operation. The maximum output power was 6.2 W at 780 nm when the 532 nm pump power was 22 W; corresponding conversion efficiency was 28.2%.

Paper Details

Date Published: 17 November 2010
PDF: 6 pages
Proc. SPIE 7843, High-Power Lasers and Applications V, 78431H (17 November 2010); doi: 10.1117/12.870184
Show Author Affiliations
Quan Sheng, Tianjin Univ. (China)
Key Lab. of Opto-Electronics Information Science and Technology (China)
Xin Ding, Tianjin Univ. (China)
Key Lab. of Opto-Electronics Information Science and Technology (China)
Xue Li, Tianjin Univ. (China)
Key Lab. of Opto-Electronics Information Science and Technology (China)
Na Chen, Tianjin Univ. (China)
Key Lab. of Opto-Electronics Information Science and Technology (China)
Bin Li, Tianjin Univ. (China)
Key Lab. of Opto-Electronics Information Science and Technology (China)
Xuanyi Yu, Nankai Univ. (China)
Wuqi Wen, Tianjin Univ. (China)
Key Lab. of Opto-Electronics Information Science and Technology (China)
Rui Zhou, Tianjin Univ. (China)
Key Lab. of Opto-Electronics Information Science and Technology (China)
Jianquan Yao, Tianjin Univ. (China)
Key Lab. of Opto-Electronics Information Science and Technology (China)


Published in SPIE Proceedings Vol. 7843:
High-Power Lasers and Applications V
Upendra N. Singh; Dianyuan Fan; Jianquan Yao; Robert F. Walter, Editor(s)

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