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Proceedings Paper

Pump to Stokes RIN transfer in silicon Raman lasers
Author(s): Xiqing Liu; Xinzhu Sang; Xiaoxia Liu; Chongxiu Yu
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Paper Abstract

The pump-to-Stokes RIN Transfer and its impact on output characteristic in silicon Raman lasers are numerically investigated. The result shows that RIN transfer strongly influence on the output RIN of the chip scale silicon Raman laser. High-frequency RIN transfer show intense oscillation at about109Hz, which is several orders higher than that in Raman fiber laser (about104Hz ). We also find that RIN transfer reaches a peak value at resonance frequencies and decreases with the increasing the free carrier lifetime.

Paper Details

Date Published: 17 November 2010
PDF: 11 pages
Proc. SPIE 7847, Optoelectronic Devices and Integration III, 78470G (17 November 2010); doi: 10.1117/12.869975
Show Author Affiliations
Xiqing Liu, Beijing Univ. of Posts and Telecommunications (China)
Xinzhu Sang, Beijing Univ. of Posts and Telecommunications (China)
Xiaoxia Liu, Beijing Univ. of Posts and Telecommunications (China)
Chongxiu Yu, Beijing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 7847:
Optoelectronic Devices and Integration III
Xuping Zhang; Hai Ming; Alan Xiaolong Wang, Editor(s)

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