Share Email Print
cover

Proceedings Paper

A study of an acid-induced defect on chemically amplified photoresist applied to sub-30nm NAND flash memory
Author(s): Yong-Hyun Lim; Jae-Doo Eom; Woo-Yung Jung; Min-Sik Jang; Byung-Seok Lee; Jin-Woong Kim
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Recently, we found a peculiar acid induced defect on chemically amplified photo resist applied to sub- 30nm NAND Flash Memory. This defect is like a hole-pattern with about 1um diameter, and induced by diffusion of acid which makes photoresist soluble in developer, even though photoresist is not exposed with KrF. With some experiment results, we found out that HCl gas, by-product of high temperature oxide which is contained inside voids between two gate lines diffuses into photoresist through high temperature oxide from voids, makes photoresist soluble in developer, and eventually creates the hole-type defect on photoresist. To prevent this defect, we can suggest some methods which are substitution of KrF photoresist into I-line photoresist, modification of oxide deposition recipe to suppress by-product, and applying of non-CAR (Chemically Amplification Resist) type KrF photoresist not sensitive to acid.

Paper Details

Date Published: 16 April 2011
PDF: 6 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79722W (16 April 2011); doi: 10.1117/12.869936
Show Author Affiliations
Yong-Hyun Lim, Hynix Semiconductor Inc. (Korea, Republic of)
Jae-Doo Eom, Hynix Semiconductor Inc. (Korea, Republic of)
Woo-Yung Jung, Hynix Semiconductor Inc. (Korea, Republic of)
Min-Sik Jang, Hynix Semiconductor Inc. (Korea, Republic of)
Byung-Seok Lee, Hynix Semiconductor Inc. (Korea, Republic of)
Jin-Woong Kim, Hynix Semiconductor Inc. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

© SPIE. Terms of Use
Back to Top