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Proceedings Paper

Carrier dynamics of doped silicon measured by femtosecond pump-terahertz probe spectroscopy
Author(s): QingLi Zhou; YuLei Shi; Tong Li; Bin Jin; DongMei Zhao; CunLin Zhang
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Paper Abstract

The carrier dynamics and terahertz photoconductivity in the n-type silicon (n-Si) as well as in the p-type Silicon (p- Si) have been investigated by using femtosecond pump-terahertz probe technique. The measurements show that the relative change of terahertz transmission of p-Si at low pump power is slightly lower than that of n-Si, due to the lower carrier density induced by the recombination of original holes in the p-type material and the photogenerated electrons. At high pump power, the bigger change of terahertz transmission of p-Si originates from the greater mobility of the carriers compared to n-Si. The transient photoconductivities are calculated and fit well with the Drude-Smith model, showing that the mobility of the photogenerated carriers decreases with the increasing pump power. The obtained results indicate that femtosecond pump-terahertz probe technique is a promising method to investigate the carrier dynamics of semiconductors.

Paper Details

Date Published: 4 November 2010
PDF: 7 pages
Proc. SPIE 7854, Infrared, Millimeter Wave, and Terahertz Technologies, 785430 (4 November 2010); doi: 10.1117/12.869894
Show Author Affiliations
QingLi Zhou, Capital Normal Univ. (China)
YuLei Shi, Capital Normal Univ. (China)
Tong Li, Tianjin Univ. of Technology and Education (China)
Bin Jin, Capital Normal Univ. (China)
DongMei Zhao, Capital Normal Univ. (China)
CunLin Zhang, Capital Normal Univ. (China)


Published in SPIE Proceedings Vol. 7854:
Infrared, Millimeter Wave, and Terahertz Technologies
Cunlin Zhang; Xi-Cheng Zhang; Peter H. Siegel; Li He; Sheng-Cai Shi, Editor(s)

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