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Proceedings Paper

Microwave signal generation with the frequency-selective sideband injection-locking of semiconductor lasers
Author(s): Hongbo Xue; Yanying Feng; Zhaoying Zhou; Xiongying Ye; Xiaojia Wang; Xu Chen
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Paper Abstract

Two longitudinally multimode Febry-Perot diode lasers have been sideband injection-locked to the +1 and -1 sidebands of a 3.4GHz electro-optical modulator (EOM). Optical heterodyne measurement showed that powers of 99.5% of the slave laser could be injection-locked to the +1 or -1 sidebands, and the unselected master laser carrier was suppressed down to -24dB. Generally, the long-term stability and efficiency of the injection-locking to the +1 sideband was worse than the -1 due to the asymmetry of the injection-locking bandwidth. The microwave signal at 6.8GHz had a measured 3dB linewidth of less than 200Hz, without considering the noise contribution by the driving signal of the additional acousto-optical modulator. The proposed method will be used for driving the stimulated Raman transitions in a Rubidium based atom gyroscope.

Paper Details

Date Published: 4 November 2010
PDF: 12 pages
Proc. SPIE 7846, Quantum and Nonlinear Optics, 78460A (4 November 2010); doi: 10.1117/12.869891
Show Author Affiliations
Hongbo Xue, Tsinghua Univ. (China)
Yanying Feng, Tsinghua Univ. (China)
Zhaoying Zhou, Tsinghua Univ. (China)
Xiongying Ye, Tsinghua Univ. (China)
Xiaojia Wang, North Univ. of China (China)
Xu Chen, Univ. of Science and Technology Beijing (China)


Published in SPIE Proceedings Vol. 7846:
Quantum and Nonlinear Optics
Qihuang Gong; Guang-Can Guo; Yuen-Ron Shen, Editor(s)

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