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Proceedings Paper

Optical bistability in InP/InAlGaAs multi-quantum-well semiconductor ring lasers
Author(s): Yan Chen; Luhong Mao; Weilian Guo; Shilin Zhang; Sheng Xie; Jinlong Yu; Xin Yu; Xianjie Li; Lifang Qi; Xiao Gu
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Paper Abstract

We demonstrate optical bistability in InP/InAlGaAs multi-quantum well(MQW) semiconductor ring lasers(SRL) which are fabricated by the use of inductively coupled plasma reactive ion etching (ICP-RIE) and can be used in a multi-ring to achieve all-optical storage. Unlike other international reports, the observed optical bistability has unidirectional regime started directly from the threshold, skip the first two regimes and greatly reduce the injection current required in applications. The device described in this article achieves threshold current 56mA which is quite low compared to other reported devices, and some analysis and experiments on the etching depth have been done.

Paper Details

Date Published: 13 November 2010
PDF: 8 pages
Proc. SPIE 7844, Semiconductor Lasers and Applications IV, 78440N (13 November 2010); doi: 10.1117/12.869789
Show Author Affiliations
Yan Chen, Tianjin Univ. (China)
Luhong Mao, Tianjin Univ. (China)
Weilian Guo, Tianjin Univ. (China)
Shilin Zhang, Tianjin Univ. (China)
Sheng Xie, Tianjin Univ. (China)
Jinlong Yu, Tianjin Univ. (China)
Xin Yu, Tianjin Univ. (China)
Xianjie Li, China Electronics Technology Group Corp. (China)
Lifang Qi, China Electronics Technology Group Corp. (China)
Xiao Gu, Tianjin Polytechnic Univ. (China)


Published in SPIE Proceedings Vol. 7844:
Semiconductor Lasers and Applications IV
Ning-Hua Zhu; Jinmin Li; Farzin Amzajerdian; Hiroyuki Suzuki, Editor(s)

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