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Proceedings Paper

High brightness InAs/GaAs quantum dot tapered laser at 1.3 µm with high temperature stability
Author(s): Yu-Lian Cao; Peng-Fei Xu; Hai-Ming Ji; Tao Yang; Liang-Hui Chen
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Paper Abstract

High brightness InAs/GaAs quantum dot tapered lasers at 1.3μm were first developed with high temperature stability. The devices consisted of a straight index-guided section formed by a ridge waveguide (RW) and a gain-guided tapered section. To enhance the mode filtering, a pair of cavity spoiling grooves had been included. For two different laser lengths L =1.5mm and 3mm with a constant full taper angle φTR = 4°, the length of the ridge waveguide section L2 was varied for 1.5 mm long devices, whose L2 was 0.5mm and 1 mm, respectively. In case of L=3 mm, the L2 was fixed at 1mm. For above-mentioned geometries, the light power (P) - current (I) characteristics and the beam quality factor (M2) were presented. The lasers with a smaller L2 have higher threshold current due to the larger area of the tapered section at fixed total length. The beam quality can be improved with longer L and L2 at fixed total length L. The M2 was lower than the value of 3 measured under different light power, moreover, the M2 increased with light power increasing. We also measured temperature dependence of threshold current for two kinds of lasers with L=1.5 and 3 mm. The threshold current was almost constant over a temperature range from 30 to 70°C. It is of important significance for the practical application because that the temperature range overlapped with the operating temperature range. In addition, temperature dependence of the M2 for the lasers with L=3 mm was also studied.

Paper Details

Date Published: 12 November 2010
PDF: 9 pages
Proc. SPIE 7844, Semiconductor Lasers and Applications IV, 784404 (12 November 2010); doi: 10.1117/12.869637
Show Author Affiliations
Yu-Lian Cao, Institute of Semiconductors (China)
Peng-Fei Xu, Institute of Semiconductors (China)
Hai-Ming Ji, Institute of Semiconductors (China)
Tao Yang, Institute of Semiconductors (China)
Liang-Hui Chen, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 7844:
Semiconductor Lasers and Applications IV
Ning-Hua Zhu; Jinmin Li; Farzin Amzajerdian; Hiroyuki Suzuki, Editor(s)

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