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Proceedings Paper

Asymmetric InAs/GaSb superlattice pin photodiode to improve temperature operation
Author(s): P. Christol; C. Cervera; J. B. Rodriguez; K. Jaworowicz; I. Ribet-Mohamed
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Paper Abstract

Mid-wavelength infrared (MWIR) InAs/GaSb superlattice (SL) pin photodiodes were fabricated by molecular Beam Epitaxy on p-type GaSb substrate. Dark current measurements as a function of temperature were performed on single SL detectors with two different period designs: one made of standard symmetric 8 InAs monolayers (MLs) / 8 GaSb MLs SL period, another made of alternative design with asymmetric 7.5 InAs MLs / 3.5 GaSb MLs SL period. Comparison of results revealed the predominance of the asymmetric SL design showing an improvement of the differential resistance area product of nearly two orders of magnitude. Spectral response measurements performed on asymmetric SL showed that the quantum efficiency was more than doubled.

Paper Details

Date Published: 24 January 2011
PDF: 10 pages
Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79451H (24 January 2011); doi: 10.1117/12.869631
Show Author Affiliations
P. Christol, CNRS, Institut d'Electronique du Sud, Univ. Montpellier 2 (France)
C. Cervera, CNRS, Institut d'Electronique du Sud, Univ. Montpellier 2 (France)
J. B. Rodriguez, CNRS, Institut d'Electronique du Sud, Univ. Montpellier 2 (France)
K. Jaworowicz, ONERA (France)
I. Ribet-Mohamed, ONERA (France)


Published in SPIE Proceedings Vol. 7945:
Quantum Sensing and Nanophotonic Devices VIII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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