Share Email Print
cover

Proceedings Paper

Investigation of the influence of resist patterning on absorber LWR for 22-nm-node EUV lithography
Author(s): Yuichi Inazuki; Takeya Shimomura; Tsukasa Abe; Taichi Ogase; Satoshi Kawashima; Tadahiko Takigawa; Hiroshi Mohri; Naoya Hayashi
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Achieving the specifications of resolution, sensitivity and line width roughness (LWR) of wafer resist is one of the top challenges of bringing extreme ultraviolet lithography (EUVL) into high volume manufacturing. Contributions to the resist LWR on wafer can be divided into two categories; chemical properties of the resist and aerial image. Chemical properties of the resist are complicated and many factors contribute to LWR, such as polymer size, sensitivity, surface reaction etc. Aerial image LWR is much simply determined by the optical properties of a mask and a scanner. Since very small LWR value of the resist is needed, EUV mask LWR is also set very severely from ITRS [1]. In our previous work [2], we demonstrated current mask LWR as comparing them with mask resist LWR and absorber LWR. As a result, we found that the absorber's LWR almost depends on resist patterning. In this paper, we will present the influence of resist patterning on absorber LWR comparing resist materials and EB tools. From the results, LWR has been reduced by 10-20% by improving EB tool. However, the LWR value at line and space pattern for 22nm-hp case have not met target of ITRS' roadmap while, by using Non-CAR, the LWR value has met the target. In particularly, the value at isolated line is dramatically improved using Non-CAR.

Paper Details

Date Published: 24 September 2010
PDF: 8 pages
Proc. SPIE 7823, Photomask Technology 2010, 78231W (24 September 2010); doi: 10.1117/12.869592
Show Author Affiliations
Yuichi Inazuki, Dai Nippon Printing Co., Ltd. (Japan)
Takeya Shimomura, DNP Corp. USA (United States)
Tsukasa Abe, Dai Nippon Printing Co., Ltd. (Japan)
Taichi Ogase, Dai Nippon Printing Co., Ltd. (Japan)
Satoshi Kawashima, Dai Nippon Printing Co., Ltd. (Japan)
Tadahiko Takigawa, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 7823:
Photomask Technology 2010
M. Warren Montgomery; Wilhelm Maurer, Editor(s)

© SPIE. Terms of Use
Back to Top