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Proceedings Paper

Effective-exposure-dose monitoring technique in EUV lithography
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Paper Abstract

EUV lithography is a promising candidate for 2x-nm-node device manufacturing. Management of effective dose is important to meet the stringent requirements for CD control. Test pattern for a lithography tool evaluation, the effective dose monitor (EDM), shows good performance in the dose monitoring for optical lithography, for example, KrF lithography. The EDM can measure an exposure dose with no influence on defocus, because the image of an EDM pattern is produced by the zero-th-order ray in diffraction only. When this technique is applied to EUV lithography, the mask shadowing effect should be taken into consideration. We calculated the shadowing effect as a function of field position and applied it to correction of the experimental dose variation. We estimated the dose variation in EUV exposure field to be 2.55 % when corrected by the shadowing effect. We showed that the EDM is useful for EUV lithography.

Paper Details

Date Published: 27 May 2010
PDF: 7 pages
Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 774824 (27 May 2010); doi: 10.1117/12.868924
Show Author Affiliations
Yumi Nakajima, Toshiba Corp. (Japan)
Kentaro Kasa, Toshiba Corp. (Japan)
Takashi Sato, Toshiba Corp. (Japan)
Masafumi Asano, Toshiba Corp. (Japan)
Suigen Kyoh, Toshiba Corp. (Japan)
Hiroyuki Mizuno, Toshiba America Electronic Components (United States)

Published in SPIE Proceedings Vol. 7748:
Photomask and Next-Generation Lithography Mask Technology XVII
Kunihiro Hosono, Editor(s)

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