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Proceedings Paper

Discussion of damage induced by trigger light pulse at high repetition frequencies in semi-insulating GaAs PCSS's materials
Author(s): Huiying Dai; Xiang Shan; Wei Shi
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Paper Abstract

Based on the analysis of temperature field generated when semi-insulating GaAs photoconductive switch irradiated by light pulse, the paper focuses on the light damage induced by nanosecond laser pulse with 1.06μm wavelength at high repetition frequencies in switch materials. On the basis of the thermal conduction theory, the transient temperature field in the materials is simulated in a computer by using the finite difference method, the main reasons of damage induced by laser in chip material are analyzed according to simulation results and experimental results of the damage test, and the damage mechanism is discussed.

Paper Details

Date Published: 9 December 2010
PDF: 6 pages
Proc. SPIE 7844, Semiconductor Lasers and Applications IV, 78441I (9 December 2010); doi: 10.1117/12.868891
Show Author Affiliations
Huiying Dai, Air Force Engineering Univ. (China)
Xiang Shan, Air Force Engineering Univ. (China)
Wei Shi, Xi'an Univ. of Technology (China)

Published in SPIE Proceedings Vol. 7844:
Semiconductor Lasers and Applications IV
Ning-Hua Zhu; Jinmin Li; Farzin Amzajerdian; Hiroyuki Suzuki, Editor(s)

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