Share Email Print
cover

Proceedings Paper

The theoretical research of the carriers distribution in the semiconductor quantum dot
Author(s): C. Zhao; M. Zhao; Y. Wang; Y. Cao; A. J. Lv; X. L. Liu; G. J. Xing
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The carriers' distribution of the semiconductor quantum dots are investigated by a rate equation method in this paper. The inhomogeneous broadening of quantum dot's size is considered with a Gaussian distribution. Carrier distribution between different quantum dots size are coupled via the carrier density in the wetting layer, carriers can be captures into the quantum dot energy levels from the wetting layer as well as thermal escaping in reverse, the relaxation effect of the carriers between the different energy level in the same quantum dot is also considered. So a detailed balance between capture and re-emission is established in the different size quantum dot. The carrier dynamics are discussed in the moment paper.

Paper Details

Date Published: 12 November 2010
PDF: 5 pages
Proc. SPIE 7844, Semiconductor Lasers and Applications IV, 78441G (12 November 2010); doi: 10.1117/12.868557
Show Author Affiliations
C. Zhao, Beijing Institute of Petrochemical Technology (China)
M. Zhao, Beijing Institute of Petrochemical Technology (China)
Y. Wang, Beijing Institute of Petrochemical Technology (China)
Y. Cao, Beijing Institute of Petrochemical Technology (China)
Beijing Univ. of Chemical Technology (China)
A. J. Lv, Beijing Institute of Petrochemical Technology (China)
X. L. Liu, Beijing Institute of Petrochemical Technology (China)
G. J. Xing, Beijing Institute of Petrochemical Technology (China)


Published in SPIE Proceedings Vol. 7844:
Semiconductor Lasers and Applications IV
Ning-Hua Zhu; Jinmin Li; Farzin Amzajerdian; Hiroyuki Suzuki, Editor(s)

© SPIE. Terms of Use
Back to Top