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Proceedings Paper

Dry etching technologies for EUV mask
Author(s): Yoshinori Iino; Makoto Karyu; Hirotsugu Ita; Tomoaki Yoshimori; Hidehito Azumano; Mikio Nonaka
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Paper Abstract

When it comes to the absorber etching of EUV (Extreme Ultra-Violet) mask, it is important to understand the mechanism of how a sidewall protection film is formed in the TaBO etching process and TaBN etching process. According to our evaluations, the sidewall protection film formed in the TaBO etching process is constituted by a fluorocarbon polymer generated through the dissociation of gas, which then acts as a sidewall protection film. On the other hand, the sidewall protection film formed in the TaBN etching process is considered an etching product. By controlling those sidewall protection films, it has become possible to determine the critical dimension (CD) of TaBO for the 44-nm L/S on mask pattern (11-nm node) to implement vertical etching using TaBN in accordance with the TaBO dimension. In doing this, a CUD of 1.7 nm (3 sigma) and CD linearity of 5.2 nm (44 to 1000 nm) are achieved. To ensure a good absorber etching shape, it is necessary to keep resist until etching is complete, and for this reason the resist selection ratio is also important.

Paper Details

Date Published: 29 September 2010
PDF: 8 pages
Proc. SPIE 7823, Photomask Technology 2010, 782305 (29 September 2010); doi: 10.1117/12.868533
Show Author Affiliations
Yoshinori Iino, Shibaura Mechatronics Corp. (Japan)
Makoto Karyu, Shibaura Mechatronics Corp. (Japan)
Hirotsugu Ita, Shibaura Mechatronics Corp. (Japan)
Tomoaki Yoshimori, Shibaura Mechatronics Corp. (Japan)
Hidehito Azumano, Shibaura Mechatronics Corp. (Japan)
Mikio Nonaka, Shibaura Mechatronics Corp. (Japan)


Published in SPIE Proceedings Vol. 7823:
Photomask Technology 2010
M. Warren Montgomery; Wilhelm Maurer, Editor(s)

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